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| RSD200N10 Transistors 4V Drive Nch MOSFET RSD200N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Dimensions (Unit : mm) CPT3 (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) Packaging specifications Package Code Type Basic ordering unit (pieces) Taping TL 2500 Inner circuit 2 RSD200N10 1 1 BODY DIODE 2 ESD PROTECTION DIODE (1)GATE (2)DRAIN (3)SOURCE Absolute maximum ratings (Ta=25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25C) Channel temperature Range of storage temperature 1 Pw10s, Duty cycle1% 2 L 265H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum tempterature allowed Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg 1 2 2 3 1 Limits 100 20 20 80 20 80 20 85 20 150 -55 to +150 Unit V V A A A A A mJ W C C (1) (2) (3) Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 6.25 Unit C/W Rev.A 1/5 RSD200N10 Transistors Electrical characteristics (Ta=25 C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) Min. - 100 - 1.0 - - - Typ. - - - - 41 44 45 - 2200 180 110 18 61 128 193 48.5 5.5 13 Max. 10 - 10 2.5 52 58 59 - - - - - - - - - - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=100V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V ID=10A, VGS=4.5V ID=10A, VGS=4.0V ID=10A, VDS=10V VDS=25V VGS=0V f=1MHz ID=10A, VDD 50V VGS=10V RL=5 RG=10 VDD 50V ID=20A VGS=10V RL=2.5 / RG=10 Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 14 - - - - - - - - - - Body diode characteristics (Source-drain) (Ta=25 C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.5 Unit V Conditions IS= 20A, VGS=0V Rev.A 2/5 RSD200N10 Transistors Electrical characteristic curves 15 T a=25C VDD=50V ID=20A Pulsed Gate Source Voltage : VGS(V) 10 5 0 0 10 20 30 40 50 Total Gate Charge : Qg(nC) Fig.3 Dynamic Input Characteristics Rev.A 3/5 RSD200N10 Transistors Rev.A 4/5 RSD200N10 Transistors Switching characteristics measurement circuit Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform Fig.3-1 Avalanche measurement circuit Fig.3-2 Avalanche waveform Rev.A 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0 |
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